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參數(shù)資料
| 型號(hào)： | S29GL128N90TFIV12 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
| 中文描述： | 3.0伏只頁面模式閃存具有110納米MirrorBit⑩工藝技術(shù) |
| 文件頁數(shù)： | 96/100頁 |
| 文件大小： | 952K |
| 代理商： | S29GL128N90TFIV12 |
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94
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Revision A4 (May 13, 2004)
Global
Removed references to RTSOP.
Distinctive Characteristics
Removed 16-word/32-byte page read buffer from Performance Characteristics.
Changed Low power consumption to 25 mA typical active read current and removed 10 mA
typical intrapage active read current.
Ordering I nformation
Changed formatting of pages.
Changed model numbers from 00,01,02,03 to 01, 02, V1, V2.
Table 1, “ Device Bus Operations”
Combined WP# and ACC columns.
Table 8, “ CFI Query I dentification String” , Table 9, “ System I nterface String” ,
Table 10, “ Device Geometry Definition” , and Table 11, “ Primary Vendor-Specific
Extended Query
Added Address (x8) column.
W ord Program Command Sequence
Added text to fourth paragraph.
Figure 1, “ W rite Buffer Programming Operation,”
Added note references and removed DQ15 and DQ13.
Figure 3, “ Program Suspend/ Program Resume,”
Changed field to read XXXh/B0h and XXXh/30h.
Passw ord Protection Command Set Definitions
Replaced all text.
Command Definitions
Changed the first cycle address of CFI Query to 55.
Table 14, “ Memory Array Commands ( x8) ”
Changed the third cycle data Device ID to 90.
Removed Unlock Bypass Reset.
Removed Note 12 and 13.
Figure 5, “ Data# Polling Algorithm,”
Removed DQ15 and DQ13.
Absolute Maximum Ratings
Removed VCC from
All other pins
with respect to Ground.
CMOS Compatible
Changed the Max of I
CC4
to 70 mA.
Added V
IL
to the Test conditions of I
CC5
, I
CC6
, and I
CC7
Change the Min of V
IL
to - 0.1 V.
Updated note 5.
Read-Only Operations– S29GL128N Only
Added t
CEH
parameter to table.
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| S29GL128N90TFIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
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| S29GL128N90TFIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL128P10FAI010 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI010 IC 128M PAGE-MODE F |
| S29GL128P10FAI020 | 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Trays 制造商:Spansion 功能描述:SPZS29GL128P10FAI020 IC 128M FLASH BGA |
| S29GL128P10FAI022 | 制造商:Spansion 功能描述:FLASH PARALLEL 3V/3.3V 128MBIT 16MX8/8MX16 100NS 64BGA - Tape and Reel |
| S29GL128P10FAIR20 | 制造商:Spansion 功能描述: |
| S29GL128P10FFI010 | 功能描述:閃存 128Mb 3V 110ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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