參數(shù)資料
型號(hào)： S29GL128N11FAI023
廠商： SPANSION LLC
元件分類(lèi)： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁(yè)數(shù)： 60/100頁(yè)
文件大小： 952K
代理商： S29GL128N11FAI023
58
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Figure 4. Erase Operation
Erase Suspend/ Erase Resume Commands
The Erase Suspend command, B0h, allows the system to interrupt a sector erase operation
and then read data from, or program data to, any sector not selected for erasure. This com-
mand is valid only during the sector erase operation, including the 50 μs time-out period
during the sector erase command sequence. The Erase Suspend command is ignored if writ-
ten during the chip erase operation or Embedded Program algorithm.
When the Erase Suspend command is written during the sector erase operation, the device
requires a typical of 5
μ
s
(
maximum of 20
μ
s) to suspend the erase operation. However, when
the Erase Suspend command is written during the sector erase time-out, the device immedi-
ately terminates the time-out period and suspends the erase operation.
After the erase operation is suspended, the device enters the erase-suspend-read mode. The
system can read data from or program data to any sector not selected for erasure. (The de-
vice
erase suspend
s all sectors selected for erasure.) Reading at any address within
erase-suspended sectors produces status information on DQ7–DQ0. The system can use
DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-sus-
pended. Refer to the Write Operation Status section for information on these status bits.
After an erase-suspended program operation is complete, the device returns to the
erase-suspend-read mode. The system can determine the status of the program operation
using the DQ7 or DQ6 status bits, just as in the standard word program operation. Refer to
Write Operation Status on page 67
for more information.
START
Write Erase
Command Sequence
(Notes 1, 2)
Data Poll to Erasing
Bank from System
Data = FFh
No
Yes
Erasure Completed
Embedded
Erase
algorithm
in progress
Notes:
1.
See
Table 12 on
page 63
and
Table 14 on
page 65
for
program
command
相關(guān)PDF資料
PDF描述
S29GL128N11FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV12 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV13 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV22 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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