參數(shù)資料
型號： S29GL128N11FAI023
廠商： SPANSION LLC
元件分類： DRAM
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝： 13 X 11 MM, FBGA-64
文件頁數(shù)： 14/100頁
文件大小： 952K
代理商： S29GL128N11FAI023
12
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Ordering Information
The ordering part number is formed by a valid combination of the following:
Valid Combinations
Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm availability of
specific valid combinations and to check on newly released combinations.
Notes:
1.
Type 0 is standard. Specify other options as required. TSOP can be packed in Types 0 and 3; BGA
can be packed in Types 0, 2, 3.
TSOP package marking omits packing type designator from ordering part number.
BGA package marking omits leading “S29” and packing type designator from ordering part
number.
Contact a local sales representative for availability.
2.
3.
4.
S29GL512N
11
F
F
I
01
0
PACKI NG TY PE
0
=
2
=
3
=
Tray (standard; see note 1)
7” Tape and Reel
13” Tape and Reel
MODEL NUMBER ( V
I O
range, protection w hen W P# = V
I L
)
01
=
V
IO
= V
CC
= 2.7 to 3.6 V, highest address sector protected
02
=
V
IO
= V
CC
= 2.7 to 3.6 V, lowest address sector protected
V1
=
V
IO
= 1.65 to 3.6 V, V
CC
= 2.7 to 3.6 V, highest address sector protected
V2
=
V
IO
= 1.65 to 3.6 V, V
CC
= 2.7 to 3.6 V, lowest address sector protected
R1
=
V
IO
= V
CC
= 3.0 to 3.6 V, highest address sector protected
R2
=
V
IO
= V
CC
= 3.0 to 3.6 V, lowest address sector protected
TEMPERATURE RANGE
I
= Industrial (–40
°
C to + 85
°
C)
PACKAGE MATERI ALS SET
A
= SnPb
F
= Pb-free (Recommended)
PACKAGE TY PE
T
=
Thin Small Outline Package (TSOP) Standard Pinout (TS056)
F
=
Fortified Ball Grid Array, 1.0 mm pitch package (LAA064)
SPEED OPTI ON
90
= 90 ns (Note 4)
10
= 100 ns (Note 4)
11
= 110 ns (Recommended)
DEVI CE NUMBER/ DESCRI PTI ON
S29GL128N, S29GL256N, S29GL512N
3.0 Volt-only, 512 Megabit (32 M x 16-Bit/64 M x 8-Bit) Page-Mode Flash Memory
Manufactured on 110 nm MirrorBit
TM
process technology
S29GL-N Valid Combinations
Base Part Number
Speed (ns)
Package
Temperature
Model Number
Packing Type
S29GL128N
90
TA, TF
(Note 2)
; FA, FF
(Note 3)
I
R1, R2
0, 2, 3 (Note 1)
10, 11
01, 02
11
V1, V2
S29GL256N
90
TA, TF
(Note 2)
; FA, FF
(Note 3)
I
R1, R2
0, 2, 3 (Note 1)
10, 11
01, 02
11
V1, V2
S29GL512N
10, 11
TA, TF
(Note 2)
; FA, FF
(Note 3)
I
01, 02
0, 2, 3 (Note 1)
11
V1, V2
相關(guān)PDF資料
PDF描述
S29GL128N11FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV12 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV13 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV22 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N11FAIS30 制造商:Spansion 功能描述:
S29GL128N11FFA010 制造商:Spansion 功能描述:
S29GL128N11FFA013 制造商:Spansion 功能描述:
S29GL128N11FFI010 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N11FFI020 制造商:Spansion 功能描述: 制造商:Spansion 功能描述:Flash - NOR IC
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