參數(shù)資料
型號(hào): S29GL128N11FAI023
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 8M X 16 FLASH 3V PROM, 110 ns, PBGA64
封裝: 13 X 11 MM, FBGA-64
文件頁(yè)數(shù): 12/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N11FAI023
10
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
Pin Description
A24–A0
A23–A0
A22–A0
DQ14–DQ0
DQ15/A-1
=
=
=
=
=
25 Address inputs (512 Mb)
24 Address inputs (256 Mb)
23 Address inputs (128 Mb)
15 Data inputs/outputs
DQ15 (Data input/output, word mode), A-1 (LSB
Address input, byte mode)
Chip Enable input
Output Enable input
Write Enable input
Hardware Write Protect input;
Acceleration input
Hardware Reset Pin input
Selects 8-bit or 16-bit mode
Ready/Busy output
3.0 volt-only single power supply
(see Product Selector Guide for speed options and
voltage supply tolerances)
Output Buffer power
Device Ground
Pin Not Connected Internally
CE#
OE#
WE#
WP#/ACC
=
=
=
=
RESET#
BYTE#
RY/BY#
V
CC
=
=
=
=
V
IO
V
SS
NC
=
=
=
相關(guān)PDF資料
PDF描述
S29GL128N11FAIV10 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV12 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV13 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV20 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N11FAIV22 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
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