參數(shù)資料
型號(hào): S29GL128N10TAIV12
廠商: Spansion Inc.
英文描述: 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述: 3.0伏只頁(yè)面模式閃存具有110納米MirrorBit⑩工藝技術(shù)
文件頁(yè)數(shù): 91/100頁(yè)
文件大?。?/td> 952K
代理商: S29GL128N10TAIV12
S29GL-N_00_B3 October 13, 2006
S29GL-N MirrorBit Flash Family
89
D a t a S h e e t
Physical Dimensions
LAA064—64-Ball Fortified Ball Grid Array (FBGA)
DI RECTI ON
相關(guān)PDF資料
PDF描述
S29GL128N10FAI010 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲(chǔ)器類型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb (16M x 8,8M x 16) 寫周期時(shí)間 - 字,頁(yè):100ns 訪問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C(TA) 安裝類型:表面貼裝 封裝/外殼:56-TFSOP(0.724",18.40mm 寬) 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
S29GL128N10TFI020 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N11FAI020 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray
S29GL128N11FAI023 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R