參數(shù)資料
型號(hào)： S29GL128N10TAIV12
廠(chǎng)商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
中文描述： 3.0伏只頁(yè)面模式閃存具有110納米MirrorBit⑩工藝技術(shù)
文件頁(yè)數(shù)： 74/100頁(yè)
文件大?。?/td> 952K
代理商： S29GL128N10TAIV12
72
S29GL-N MirrorBit Flash Family
S29GL-N_00_B3 October 13, 2006
D a t a S h e e t
DQ3: Sector Erase Timer
After writing a sector erase command sequence, the system may read DQ3 to determine
whether or not erasure has begun. (The sector erase timer does not apply to the chip erase
command.) If additional sectors are selected for erasure, the entire time-out also applies after
each additional sector erase command. When the time-out period is complete, DQ3 switches
from a
0
to a
1
. If the time between additional sector erase commands from the system can
be assumed to be less than 50 μs, the system need not monitor DQ3. See also
Sector Erase
Command Sequence on page 57
.
After the sector erase command is written, the system should read the status of DQ7 (Data#
Polling) or DQ6 (Toggle Bit I) to ensure that the device has accepted the command sequence,
and then read DQ3. If DQ3 is
1
, the Embedded Erase algorithm has begun; all further com-
mands (except Erase Suspend) are ignored until the erase operation is complete. If DQ3 is
0
,
the device accepts additional sector erase commands. To ensure the command is accepted,
the system software should check the status of DQ3 prior to and following each subsequent
sector erase command. If DQ3 is high on the second status check, the last command might
not have been accepted.
Table 16 on page 72
shows the status of DQ3 relative to the other status bits.
DQ1: W rite-to-Buffer Abort
DQ1 indicates whether a Write-to-Buffer operation was aborted. Under these conditions DQ1
produces a
1
. The system must issue the Write-to-Buffer-Abort-Reset command sequence to
return the device to reading array data. See
Write Buffer on page 14
for more details.
Table 16. Write Operation Status
Notes:
1. DQ5 switches to
1
when an Embedded Program, Embedded Erase, or Write-to-Buffer operation has exceeded the
maximum timing limits. Refer to the section on DQ5 for more information.
2. DQ7 and DQ2 require a valid address when reading status information. Refer to the appropriate subsection for
further details.
3. The Data# Polling algorithm should be used to monitor the last loaded write-buffer address location.
4. DQ1 switches to
1
when the device has aborted the write-to-buffer operation
Status
DQ7
(Note 2)
DQ6
DQ5
(Note 1)
DQ3
DQ2
(Note 2)
DQ1
RY/BY#
Standard
Mode
Embedded Program Algorithm
DQ7#
Toggle
0
N/A
No toggle
0
0
Embedded Erase Algorithm
0
Toggle
0
1
Toggle
N/A
0
Program
Suspend
Mode
Program-
Suspend
Read
Program-Suspended
Sector
Invalid (not allowed)
1
Non-Program
Suspended Sector
Data
1
Erase
Suspend
Mode
Erase-
Suspend
Read
Erase-Suspended
Sector
1
No toggle
0
N/A
Toggle
N/A
1
Non-Erase
Suspended Sector
Data
1
Erase-Suspend-Program
(Embedded Program)
DQ7#
Toggle
0
N/A
N/A
N/A
0
Write-to-
Buffer
Busy
(Note 3)
DQ7#
Toggle
0
N/A
N/A
0
0
Abort
(Note 4)
DQ7#
Toggle
0
N/A
N/A
1
0
相關(guān)PDF資料
PDF描述
S29GL128N10FAI010 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI012 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI013 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI020 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
S29GL128N10FAI022 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL128N10TF101 制造商:Spansion 功能描述:
S29GL128N10TFI010 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤(pán) 零件狀態(tài):在售 存儲(chǔ)器類(lèi)型:非易失 存儲(chǔ)器格式:閃存 技術(shù):FLASH - NOR 存儲(chǔ)容量:128Mb （16M x 8，8M x 16） 寫(xiě)周期時(shí)間 - 字，頁(yè):100ns 訪(fǎng)問(wèn)時(shí)間:100ns 存儲(chǔ)器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C（TA） 安裝類(lèi)型:表面貼裝 封裝/外殼:56-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商器件封裝:56-TSOP 標(biāo)準(zhǔn)包裝:91
S29GL128N10TFI020 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC
S29GL128N11FAI020 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray
S29GL128N11FAI023 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R
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