型號: | S29GL128N10FFIV13 |
廠商: | SPANSION LLC |
元件分類: | DRAM |
英文描述: | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
中文描述: | 8M X 16 FLASH 3V PROM, 100 ns, PBGA64 |
封裝: | 13 X 11 MM, 1MM PITCH, LEAD FREE, FBGA-64 |
文件頁數(shù): | 1/100頁 |
文件大?。?/td> | 952K |
代理商: | S29GL128N10FFIV13 |
相關PDF資料 |
PDF描述 |
---|---|
S29GL128N10FFIV20 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
S29GL128N10FFIV22 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
S29GL128N10FFIV23 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
S29GL128N10TAI010 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
S29GL128N10TAI012 | 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology |
相關代理商/技術參數(shù) |
參數(shù)描述 |
---|---|
S29GL128N10TF101 | 制造商:Spansion 功能描述: |
S29GL128N10TFI010 | 功能描述:IC FLASH 制造商:cypress semiconductor corp 系列:GL-N 包裝:托盤 零件狀態(tài):在售 存儲器類型:非易失 存儲器格式:閃存 技術:FLASH - NOR 存儲容量:128Mb (16M x 8,8M x 16) 寫周期時間 - 字,頁:100ns 訪問時間:100ns 存儲器接口:并聯(lián) 電壓 - 電源:2.7 V ~ 3.6 V 工作溫度:-40°C ~ 85°C(TA) 安裝類型:表面貼裝 封裝/外殼:56-TFSOP(0.724",18.40mm 寬) 供應商器件封裝:56-TSOP 標準包裝:91 |
S29GL128N10TFI020 | 制造商:Spansion 功能描述:S29GL128N10TFI020 制造商:Spansion 功能描述:Flash - NOR IC |
S29GL128N11FAI020 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA Tray |
S29GL128N11FAI023 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 110ns 64-Pin Fortified BGA T/R |