參數(shù)資料
型號: S29GL064N90TFIV10
廠商: SPANSION LLC
元件分類: DRAM
英文描述: 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
中文描述: 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
封裝: LEAD FREE, MO-142EC, TSOP-56
文件頁數(shù): 56/79頁
文件大小: 2191K
代理商: S29GL064N90TFIV10
56
S29GL-N MirrorBit
Flash Family
S29GL-N_01_09 November 16, 2007
D a t a
S h e e t
Figure 10.5
Data# Polling Algorithm
Notes
1. VA = Valid address for programming. During a sector erase operation, a valid address is any sector address within the sector being
erased. During chip erase, a valid address is any non-protected sector address.
2. DQ7 should be rechecked even if DQ5 =
1
because DQ7 may change simultaneously with DQ5.
10.12 RY/BY#: Ready/Busy#
The RY/BY# is a dedicated, open-drain output pin which indicates whether an Embedded Algorithm is in
progress or complete. The RY/BY# status is valid after the rising edge of the final WE# pulse in the command
sequence. Since RY/BY# is an open-drain output, several RY/BY# pins can be tied together in parallel with a
pull-up resistor to V
CC
.
If the output is low (Busy), the device is actively erasing or programming. (This includes programming in the
Erase Suspend mode.) If the output is high (Ready), the device is in the read mode, the standby mode, or in
the erase-suspend-read mode.
Table 10.5 on page 60
shows the outputs for RY/BY#.
DQ7 = Data
Yes
No
No
DQ5 = 1
No
Yes
Yes
FAIL
PASS
Read DQ15–DQ0
Addr = VA
Read DQ15–DQ0
Addr = VA
DQ7 = Data
START
相關(guān)PDF資料
PDF描述
S29GL064N90TFIV12 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TFIV20 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TFIV22 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TFIV60 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
S29GL064N90TFIV62 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology
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