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參數(shù)資料
| 型號(hào)： | S29GL01GP12TAI022 |
| 廠商： | Spansion Inc. |
| 英文描述： | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| 中文描述： | 3.0伏只頁(yè)面模式閃存具有90納米MirrorBit工藝技術(shù) |
| 文件頁(yè)數(shù)： | 8/71頁(yè) |
| 文件大?。?/td> | 990K |
| 代理商： | S29GL01GP12TAI022 |
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6
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
2.
Input/Output Descriptions & Logic Symbol
Table 2.1
identifies the input and output package connections provided on the device.
Table 2.1
Input/Output Descriptions
Symbol
Type
Description
A25–A0
Input
Address lines for GL01GP
A24–A0 for GL512P
A23–A0 for GL256P,
A22–A0 for GL128P.
DQ14–DQ0
I/O
Data input/output.
DQ15
I/O
DQ15: Data input/output in word mode .
A-1: LSB address input in byte mode.
CE#
Input
Chip Enable.
OE#
Input
Output Enable.
WE#
Input
Write Enable.
V
CC
V
IO
V
SS
NC
Supply
Device Power Supply.
Supply
Versatile IO Input.
Supply
Ground.
No Connect
Not connected internally.
RY/BY#
Output
Ready/Busy. Indicates whether an Embedded Algorithm is in progress or complete. At
V
IL
, the device is actively erasing or programming. At High Z, the device is in ready.
Selects data bus width. At V
IL
, the device is in byte configuration and data I/O pins DQ0-
DQ7 are active. At V
IH
, the device is in word configuration and data I/O pins DQ0-DQ15
are active.
BYTE#
Input
RESET#
Input
Hardware Reset. Low = device resets and returns to reading array data.
WP#/ACC
Input
Write Protect/Acceleration Input. At V
IL
, disables program and erase functions in the
outermost sectors. At V
HH
, accelerates programming; automatically places device in
unlock bypass mode. Should be at V
IH
for all other conditions.
Reserved for future use.
RFU
Reserved
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL01GP12TAI023 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TAIV10 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TAIV12 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TAIV13 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI010 | 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL01GP12TAI023 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TAIV10 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TAIV12 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TAIV13 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology |
| S29GL01GP12TFI010 | 功能描述:閃存 1Gb 3V 120ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
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