參數(shù)資料
型號(hào)： S29GL01GP12TAI022
廠商： Spansion Inc.
英文描述： 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
中文描述： 3.0伏只頁(yè)面模式閃存具有90納米MirrorBit工藝技術(shù)
文件頁(yè)數(shù)： 18/71頁(yè)
文件大?。?/td> 990K
代理商： S29GL01GP12TAI022
16
S29GL-P MirrorBit
TM
Flash Family
S29GL-P_00_A3 November21,2006
D a t a
S h e e t
( A d v a n c e
I n f o r m a t i o n )
7.6
Autoselect
The Autoselect mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output from the internal register (separate from the memory array) on DQ7-DQ0. This
mode is primarily intended for programming equipment to automatically match a device to be programmed
with its corresponding programming algorithm (see
Table 7.3
). The Autoselect codes can also be accessed
in-system.
When verifying sector protection, the sector address must appear on the appropriate highest order address
bits (see
Table 7.4
to
Table 7.5
). The remaining address bits are don't care. When all necessary bits have
been set as required, the programming equipment may then read the corresponding identifier code on DQ15-
DQ0. The Autoselect codes can also be accessed in-system through the command register.
There are two methods to access autoselect codes. One uses the autoselect command, the other applies V
ID
on address pin A9.
When using programming equipment, the autoselect mode requires V
ID
(11.5 V to 12.5 V) on address pin A9.
Address pins must be as shown in
Table 7.2
.
To access the Autoselect codes, the host system must issue the Autoselect command.
The Autoselect command sequence may be written to an address within a sector that is either in the read
or erase-suspend-read mode.
The Autoselect command may not be written while the device is actively programming or erasing.
The system must write the reset command to return to the read mode (or erase-suspend-read mode if the
sector was previously in Erase Suspend).
See
Table 12.1 on page 61
for command sequence details.
相關(guān)PDF資料
PDF描述
S29GL01GP12TAI023 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TAIV10 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TAIV12 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TAIV13 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI010 3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S29GL01GP12TAI023 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TAIV10 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TAIV12 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TAIV13 制造商:SPANSION 制造商全稱:SPANSION 功能描述:3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
S29GL01GP12TFI010 功能描述:閃存 1Gb 3V 120ns Parallel NOR 閃存 RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問(wèn)時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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