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參數(shù)資料
| 型號(hào)： | S29CD016J1MQFM102 |
| 廠商： | Spansion Inc. |
| 英文描述： | 32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| 中文描述： | 32/16兆位的CMOS 2.6伏或3.3伏，只有同時(shí)讀/寫，雙啟動(dòng)，突發(fā)模式閃存記憶體與VersatileI /輸出 |
| 文件頁數(shù)： | 32/76頁 |
| 文件大?。?/td> | 1245K |
| 代理商： | S29CD016J1MQFM102 |
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30
S29CD-J & S29CL-J Flash Family
S29CD-J_CL-J_00_B1 September27,2006
D a t a
S h e e t
( P r e l i m i n a r y )
The following are the allowable operations when Erase Suspend is issued under certain conditions:
For the Busy Sectors, the host system may
Read status
Write the Erase Resume command
For the Non Busy Sectors, the system may
Read data
Program data or write the Suspend/Resume Erase command
8.7.5
Program Suspend/Program Resume Commands
The Program Suspend command allows the system to interrupt an embedded programming operation so that
data can read from any non-suspended sector. When the Program Suspend command is written during a
programming process, the device halts the programming operation and updates the status bits.
After the programming operation has been suspended, the system can read array data from any non-
suspended sector. If a read is needed from the Secured Silicon Sector area, then user must use the proper
command sequences to enter and exit this region. The Sector Erase and Program Resume Command is
ignored if the Secured Silicon sector is enabled.
After the Program Resume command is written, the device reverts to programming. The system can
determine the status of the program operation using the DQ7, DQ6, and/or RY/BY# status bits, just as in the
standard program operation. See
Section 8.8,
Write Operation Status
on page 31
for more information.
The system must write the Program Resume command in order to exit the Program Suspend mode, and
continue the programming operation. Further writes of the Program Resume command are ignored. Another
Program Suspend command can be written after the device has resumed programming.
The following are the allowable operations when Program Suspend is issued under certain conditions:
For the Busy Sectors, the host system may write the Program Resume command
For the Non Busy Sectors, the system may read data
8.7.6
Accelerated Program and Erase Operations
Accelerated programming and erasing is enabled through the ACC function. This method is faster than the
standard program command sequences.
The device offers accelerated program/erase operations through the ACC pin. When the system asserts V
HH
(12V) on the ACC pin, the device automatically enters the Unlock Bypass mode. The system may then write
the two-cycle Unlock Bypass program command sequence to do accelerated programming. The device uses
the higher voltage on the ACC pin to accelerate the operation. Any sector that is being protected with the
WP# pin is still protected during accelerated program or Erase. Removing V
HH
from the ACC input, upon
completion of the embedded program or erase operation, returns the device to normal operation.
Notes
In this mode, the write protection function is bypassed unless the PPB Lock Bit = 1.
The ACC pin must not be at V
HH
for operations other than accelerated programming and accelerated chip
erase, or device damage may result.
The ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result.
The Accelerated Program command is not permitted if the Secured Silicon sector is enabled.
8.7.7
Unlock Bypass
The device features an Unlock Bypass mode to facilitate faster programming, erasing (Sector and Chip
Erase), as well as CFI commands. Once the device enters the Unlock Bypass mode, only two write cycles are
required to program or erase data, instead of the normal four cycles. This results in faster total programming/
erasing time.
Section 20.1,
Command Definitions
on page 69
shows the requirements for the unlock bypass command
sequences.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29CD016J1MQFM103 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD016J1MQFM133 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O |
| S29CD032G | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:CMOS 2.5 VOLT ONLY BURST MODE DUAL BOOT, SIMULTANEOUS READ /WRITE FLASH MEMORY |
| S29CD032G0JFAA000 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
| S29CD032G0JFAA002 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O |
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