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參數(shù)資料
| 型號(hào)： | S2386-44K |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For visible to IR, general-purpose photometry |
| 中文描述： | 硅光電二極管對(duì)可見(jiàn)光，紅外線，通用光度法 |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 120K |
| 代理商： | S2386-44K |
Si photodiode
S2386 series
S2386-18K/-5K/-44K/-45K
S2386-8K
REVERSE VOLTAGE (V)
D
(Typ. Ta=25
C)
10 fA
100 fA
1 pA
10 pA
100 pA
1 nA
0.01
0.1
1
10
100
I
Dark current vs. reverse voltage
I
Shunt resistance vs. ambient temperature
KSPDB0113EB
KSPDB0114EA
AMBIENT TEMPERATURE (
C)
S
(Typ. V
R
=10 mV)
100 k
1 M
10 M
100 M
1 G
10 T
-
20
0
20
40
60
S2386-5K
S2386-18K/-18L
S2386-45K
S2386-44K
80
10 G
100 G
1 T
3
KSPDA0102EB
KSPDA0048EBy
I
Dimensional outlines (unit: mm)
S2386-18K
S2386-18L
1
2
3
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CONNECTED TO CASE
WINDOW
3.0 ± 0.2
0.45
LEAD
1
2
0.45
LEAD
4.7 ± 0.1
5.4 ± 0.2
2.54 ± 0.2
CONNECTED TO CASE
2
3
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S2386-45K | Si photodiode For visible to IR, general-purpose photometry |
| S2386-5K | Si photodiode For visible to IR, general-purpose photometry |
| S2386-8K | Si photodiode For visible to IR, general-purpose photometry |
| S2387 | Si photodiode For visible to IR, general-purpose photometry |
| S2387-1010R | Si photodiode For visible to IR, general-purpose photometry |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S2386-45K | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2386-5K | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2386-8K | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387 | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-1010R | 制造商:HAMAMATSU 制造商全稱(chēng):Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
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