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參數(shù)資料
| 型號： | S2386-5K |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For visible to IR, general-purpose photometry |
| 中文描述： | 硅光電二極管對可見光，紅外線，通用光度法 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 120K |
| 代理商： | S2386-5K |
Features
l
High sensitivity
l
Low dark current
l
High reliability
l
High linearity
Applications
l
Analytical equipment
l
Optical measurement equipment
P H O T O D I O D E
Si photodiode
S2386 series
For visible to IR, general-purpose photometry
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Package
Active
area size
Effective
active area
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline/
Window
material *
(mm)
(mm)
(mm
2
)
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
/K
/L
TO-18
1.1 × 1.1
1.2
2.4 × 2.4
3.6 × 3.6
3.9 × 4.6
5.8 × 5.8
5.7
13
17.9
33
/K
/K
/K
TO-5
TO-8
30
-40 to +100
-55 to +125
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Photo sensitivity
S
(A/W)
Spectral
response
range
λ
Peak
sensitivity
wavelength
λ
p
Short circuit
current
Isc
100
lx
Dark
current
I
D
V
R
=10 mV
Max.
Temp.
coefficient
of I
D
T
CID
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capacitance
Ct
V
R
=0 V
f=10 kHz
Shunt
resistance
Rsh
V
R
=10 mV
NEP
V
R
=0 V
λ
=
λ
p
Type No.
(nm)
(nm)
λ
p
GaP
LED
560 nm
He-Ne
laser
633 nm
GaAs
LED
930 nm
Min.
(μA)
1
4
4.4
9.6
12
26
Typ.
(μA)
1.3
5.7
6.0
12
17
33
(pA)
(times/° C)
(μs)
(pF)
Min.
(G
)
Typ.
(G
)
(W/Hz
1/2
)
S2386-18K
S2386-18L
S2386-5K
S2386-44K
S2386-45K
S2386-8K
* Window material K: borosilicate glass, L: lens type borosilicate glass
2
0.4
140
5 100 6.8 × 10
-16
5
1.8
3.6
5.5
10
730
1600
2300
4300
2
50 9.6 × 10
-16
20
30
50
0.5
-15
0.2 10 2.1 × 10
-15
320 to 1100
960
0.6
0.38
0.43
0.59
1.12
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S2386-8K | Si photodiode For visible to IR, general-purpose photometry |
| S2387 | Si photodiode For visible to IR, general-purpose photometry |
| S2387-1010R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-130R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | Si photodiode For visible to IR, general-purpose photometry |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S2386-8K | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387 | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-1010R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-130R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
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