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參數(shù)資料
| 型號(hào)： | S2387-1010R |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For visible to IR, general-purpose photometry |
| 中文描述： | 硅光電二極管對(duì)可見光，紅外線，通用光度法 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 121K |
| 代理商： | S2387-1010R |
Features
l
High sensitivity
l
Low dark current
l
High linearity
Applications
l
Analytical equipment
l
Optical measurement equipment, etc.
P H O T O D I O D E
Si photodiode
S2387 series
For visible to IR, general-purpose photometry
I
General ratings / Absolute maximum ratings
Absolute maximum ratings
Reverse
voltage
V
R
Max.
(V)
Package
Active
area size
Effective
active area
Operating
temperature
Topr
(°C)
Storage
temperature
Tstg
(°C)
Type No.
Dimensional
outline/
Window
material *
(mm)
2.7 × 15
6 × 7.6
8.9 × 10.1
15 × 16.5
3.0 × 40
(mm)
1.1 × 5.9
2.4 × 2.4
5.8 × 5.8
10 × 10
1.2 × 29.1
(mm
2
)
6.4
5.7
33
100
35
S2387-16R
S2387-33R
S2387-66R
S2387-1010R
S2387-130R
/R
/R
/R
/R
/R
30
-20 to +60
-20 to +80
I
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Peak
sensi-
tivity
wave-
length
λ
p
Photo sensitivity
S
(A/W)
Short circuit
current
Isc
100
lx
Spectral
response
range
λ
λ
p
GaP
LED
He-Ne
laser
Min. Typ.
Temp.
coeffi-
cient
of I
D
T
CID
Shunt
resistance
Rsh
V
R
=10 mV
NEP
V
R
=0 V
λ
=
λ
p
Dark
current
I
D
V
R
=10 mV
Max.
Rise time
tr
V
R
=0 V
R
L
=1 k
Terminal
capaci-
tance
Ct
V
R
=0 V
f=10 kHz
Min. Typ.
(pF)
Type No.
(nm)
(nm)
560 nm 633 nm(μA) (μA)
(pA)
(times/° C)
(μs)
(G
) (G
)
(W/Hz
1/2
)
S2387-16R
S2387-33R
S2387-66R
S2387-1010R
S2387-130R
* Window material, R: resin coating
4.4
4.4
24
68
25
6.0
5.8
31
91
32
5
1.8
730
2
50 9.9 × 10
-16
50
200
100
10
33
11
4300
12000
5000
0.2 10 2.2 × 10
-15
0.05
5 3.1 × 10
-15
0.1 20 1.6 × 10
-15
320 to 1100
960
0.58
0.33
0.37
1.12
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S2387-130R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-33R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-66R | Si photodiode For visible to IR, general-purpose photometry |
| S250-50 | 250 WATTS-50 VOLTS 1.5-30 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S2387-130R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-33R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-66R | 制造商:Hamamatsu Photonics 功能描述:PHOTODIODE 960NM |
| S238A13 | 制造商:APEM 功能描述: |
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