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參數(shù)資料
| 型號(hào)： | S2387-1010R |
| 廠商： | Hamamatsu Photonics |
| 英文描述： | Si photodiode For visible to IR, general-purpose photometry |
| 中文描述： | 硅光電二極管對(duì)可見光，紅外線，通用光度法 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 121K |
| 代理商： | S2387-1010R |
Si photodiode
S2387 series
AMBIENT TEMPERATURE
(C)
S
(Typ. V
R
=10 mV)
100 k
1 M
10 M
100 M
1 G
10 T
-
20
0
20
40
60
S2387-16R/33R
S2387-130R
S2387-1010R
80
10 G
100 G
1 T
0
200
0.1
0.2
0.3
0.4
0.5
0.6
0.7
400
600
800
1000
WAVELENGTH (nm)
P
(Typ. Ta=25
C)
I
Spectral response
I
Photo sensitivity temperature characteristic
KSPDB0115EA
KSPDB0058EB
KSPDB0116EA
KSPDB0117EA
-
0.5
0
+0.5
+1.0
+1.5
200
400
600
800
1000
WAVELENGTH
(nm)
T
%
/
C
(Typ.)
I
Rise time vs. load resistance
I
Dark current vs. reverse voltage
I
Shunt resistance vs. ambient temperature
KSPDB0118EA
LOAD RESISTANCE (
)
R
(Typ. Ta=25
C, V
R
=0 V)
10 ns
100 ns
1
μ
s
10
μ
s
100
μ
s
1 ms
10
2
10
3
10
4
10
5
S2387-16R/33R
S2387-130R
S2387-1010R
REVERSE VOLTAGE (V)
D
(Typ. Ta=25
C)
10 fA
100 fA
1 pA
10 pA
100 pA
1 nA
0.01
0.1
1
10
100
S2387-16R/33R
S2387-66R
S2387-1010R
S2387-130R
2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S2387-130R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-33R | Si photodiode For visible to IR, general-purpose photometry |
| S2387-66R | Si photodiode For visible to IR, general-purpose photometry |
| S250-50 | 250 WATTS-50 VOLTS 1.5-30 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S2387-130R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-16R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-33R | 制造商:HAMAMATSU 制造商全稱:Hamamatsu Corporation 功能描述:Si photodiode For visible to IR, general-purpose photometry |
| S2387-66R | 制造商:Hamamatsu Photonics 功能描述:PHOTODIODE 960NM |
| S238A13 | 制造商:APEM 功能描述: |
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