參數(shù)資料
型號(hào): S1T8528X01-Q0R0
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: IC, 10/100 BASE-T PHY TRANSCEIVER
中文描述: 強(qiáng)化- 1射頻集成電路芯片CT0
文件頁(yè)數(shù): 2/35頁(yè)
文件大小: 1905K
代理商: S1T8528X01-Q0R0
S1T8528
ENHANCED-1 CHIP CT0 RF IC
2
BLOCK DIAGRAM
Limiting
IF AMP
RSSI
Carrier
Detector
Rectifier
Gain Cell
Regulator
(Vcc/2)
Limiter
Gain Cell
Rectifier
IF AMP
(455KHz)
13
14
15
16
17
18
19
21
22
23
Quadrature
Detector
FSK
COMP
ALC
35
38
39
40
41
42
43
44
45
46
47
48
RX
VCO
IF AMP
(10.7MHz)
1st
MIX
PLL Regulator
( 2.05 V )
Programmable Counter ( REF )
RX Phase
Detector
TX Phase
Detector
fMCU
4_25 CNT
CONTROL
Buffer
SUM
AMP
MIC
AMP
SPK
AMP2
SUM
AMP
PRE AMP
AMP
Compander
mute
X-tal
OSC
Low
Battery
Detector
2nd
MIX
36
34
33
32
31
30
29
28
27
26
25
12
11
10
9
8
7
5
4
3
1
2
-
+
VREF
C
C
S
S
C
C
C
D
L
E
A
P
EPI
ERC
SAI
SAO1
SAO2
VCC
(COMP)
GND
(COMP)
CPI
CPO
ALC
24
V
REF
(COMP)
2
V
(
L
L
G
(
Q
R
D
D
R
2
6
37
2LOI
GND
(PLL)
V
REF
(RF)
2
1LOI
1LOI
1MI
TIF
1MI
1MO
V
REF
(PLL)
VCO
RX
PDR
20
EO
Splatter
Filter
VREF
+
-
Programmable Counter ( RX )
Programmable Counter ( TX )
Internal
cap.
SPK
AMP1
Volume control
VCC
(RX)
相關(guān)PDF資料
PDF描述
S289P Silicon Darlington Phototransistor(極高靈敏度的硅達(dá)林頓光晶體管)
S326SYGWA-S530-E2 Technical Data Sheet 0.28 single digit Displays
S350P Silicon NPN Phototransistor(用于檢測(cè)器,集電極電流50mA的NPN光晶體管)
S350P Silicon NPN Phototransistor
S391D Silicon PIN Diode
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S1T8531 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:WIDEBAND FM/FSK IF RECEIVER
S1T8531X01-S0B0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:WIDEBAND FM/FSK IF RECEIVER
S1T8536 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2.4GHZ-2.5GHZ SINGLE-CHIP RF TRANSCEIVER
S1T8536X01-T0R0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:2.4GHZ-2.5GHZ SINGLE-CHIP RF TRANSCEIVER
S1T8602B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:LOW VOLTAGE AUDIO AMPLIFIER