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參數(shù)資料
| 型號(hào)： | S350P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光電晶體管 |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 75K |
| 代理商： | S350P |
S350P
Vishay Telefunken
1 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81543
Silicon NPN Phototransistor
Description
S350P is a high sensitive silicon NPN epitaxial planar
phototransistor in a miniature plastic case with flat win-
dow.
With a lead center–to–center spacing of 2.54mm and
a package width of 2.4mm the devices are easily
stackable on PC boards and assembled to arrays of
unlimited size.
The epoxy package itself is an IR filter, spectrally
matched to GaAs IR emitters with
p
> 850nm.
Features
High radiant sensitivity
Miniature T– flat plastic package with IR filter
Very wide angle of half sensitivity
=
±
40
Suitable for near infrared radiation
Suitable for 0.1” (2.54 mm) center–to–center
spacing
94 8640
Applications
Detector in electronic control and drive circuits
Absolute Maximum Ratings
T
amb
= 25 C
Parameter
Collector Emitter Voltage
Emitter Collector Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
Symbol
V
CEO
V
ECO
I
C
I
CM
P
tot
T
j
T
stg
T
sd
R
thJA
Value
32
5
50
100
100
100
–55...+100
260
450
Unit
V
V
mA
mA
mW
C
C
C
K/W
t
p
/T = 0.5, t
p
T
amb
10 ms
55 C
t
3 s
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