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參數資料
| 型號： | S350P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光電晶體管 |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 75K |
| 代理商： | S350P |
S350P
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81543
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
I
ca
Min
32
Typ
Max
Unit
V
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E=0
E
e
= 1 mW/cm
2
,
= 950 nm, V
CE
= 5 V
2
6
1
200
nA
pF
mA
0.2
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
±
40
925
deg
nm
nm
V
p
0.5
860...990
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
CEsat
0.3
t
on
6
s
Turn–Off Time
t
off
5
s
Cut–Off Frequency
f
c
110
kHz
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
25
50
75
100
125
P
t
100
94 8308
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8260
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=20V
Figure 2. Collector Dark Current vs. Ambient Temperature
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