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參數(shù)資料
| 型號(hào)： | S-8328J25MC-F2F-T2 |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.3 A SWITCHING CONTROLLER, 287.5 kHz SWITCHING FREQ-MAX, PDSO5 |
| 封裝： | PLASTIC, SOT-23, 5 PIN |
| 文件頁(yè)數(shù)： | 13/65頁(yè) |
| 文件大小： | 759K |
| 代理商： | S-8328J25MC-F2F-T2 |
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SMALL PACKAGE PWM/PFM CONTROL STEP-UP SWITCHING REGULATOR
S-8324/8328 Series
Rev. 7.2_10
20
Seiko Instruments Inc.
2. Diode
Use an external diode that meets the following requirements:
Low forward voltage:
(VF<0.3V)
High switching speed:
(50 ns max.)
Reverse voltage:
VOUT+VF or more
Rated current:
IPK or more
3. Capacitors (CIN, COUT)
A capacitor at the input side (CIN) improves the efficiency by reducing the power impedance and stabilizing the input current.
Select a CIN value according to the impedance of the power supply used. The capacitor value should be around 10
F.
A capacitor at the output side (COUT) is used for smoothing the ripple voltage. Therefore select a capacitor with a small ESR
(Equivalent Series Resistance) and a large capacitance. The capacitor value should be 10
F min. A tantalum electrolytic
capacitor and an organic semiconductor capacitor are especially recommended because of their superior low-temperature
characteristic and leakage current characteristic.
4. External transistor (S-8328 Series)
For the S-8328 Series, connecting an external transistor increases the output current. A bipolar (NPN) transistor or an
enhancement (N-channel) MOS FET transistor can be used as external transistor.
4.1. Bipolar (NPN) transistor
A circuit example using a bipolar transistor (NPN), Sanyo 2SD1628G (hFE=280 to 560) is shown in Figure 11. The hFE value
and the Rb value determine the driving capacity to increase the output current using a bipolar transistor. A peripheral circuit
example of the transistor is shown in Figure 8.
1 k
is recommended for Rb. Rb is caluculated from the following formula:
VOUT-0.7
0.4
VDD-0.7
0.4
Rb=
-
(Rb=
-
for D, E, J types)
Ib
|IEXTH|
Ib
|IEXTH|
Ib=IPK/hFE
A small Rb increases output current, however, the efficiency decreases.
The current flows pulsating and there is voltage drop due to wiring resistance in an actual circuit, therefore optimum Rb
value should be determined by experiment.
A speed-up capacitor connected in parallel with Rb resistance as shown in Figure 9 decreases the switching loss and
improves the efficiency.
Cb is caluculated from the following formula:
1
Cb
≤
2
π × Rb × fOSC × 0.7
However, in practice, the optimum Cb value also varies with the characteristics of the bipolar transistor to be employed.
Therefore, determine the optimum value through experiments.
Figure 8 External transistor peripheral
VOUT (VDD for D, E, J types)
IPK
EXT
1K
Nch
Pch
Rb
S-8328
2200pF
Cb
DISCONTINUED
PRODUCT
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