參數(shù)資料
型號(hào)： S-29355A
廠商： Seiko Instruments Inc.
英文描述： CMOS 4Kbit Serial EEPROM(4K位 CMOS 串行EEPROM)
中文描述： 4Kbit的CMOS串行EEPROM（4K的位的CMOS串行EEPROM的）
文件頁數(shù)： 4/40頁
文件大小： 166K
代理商： S-29355A
CMOS 2K/4K-bit SERIAL E
2
PROM
S-29255A/29355A
Seiko Instruments Inc.
3
Pin Capacitance
Table 5
(Ta=25
°
C, f=1.0 MHz, V
CC
=5 V)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Unit
Input capacitance
Output capacitance
C
IN
C
OUT
V
IN
=0 V
V
OUT
=0 V
8
pF
pF
10
DC Electrical Characteristics
Parameter
Smbl
Conditions
Read/write operations
Read operation
Unit
V
CC
=5.0 V
±
10 %
V
CC
=3.0 V
±
10 %
V
CC
=1.8 to 2.7 V
Min.
Typ.
Max.
2.0
Min.
Typ.
Max.
1.0
Min.
Typ.
Max.
0.5
Current consumption
(READ)
I
CC1
DO unloaded
mA
Current consumption
(PROGRAM)
I
CC2
DO unloaded
5.0
2.0
mA
Parameter
Smbl
Conditions
Read/write operations
Read operation
Unit
V
CC
=5.0 V
±
10 %
V
CC
=2.7 to 6.5 V
V
CC
=1.8 to 2.7 V
Min.
Typ.
Max.
1.0
Min.
Typ.
Max.
1.0
Min.
Typ.
Max.
1.0
Standby current
consumption
Input leakage current
Output leakage
current
Low level output
voltage
I
SB
Input: V
CC
or GND
μ
A
I
LI
I
LO
V
IN
=GND to V
CC
V
OUT
=GND to V
CC
0.1
0.1
1.0
1.0
0.1
0.1
1.0
1.0
0.1
0.1
1.0
1.0
μ
A
μ
A
V
OL
CMOS I
OL
=100
μ
A
0.1
0.1
0.1
V
TTL I
OL
=2.1 mA
CMOS
V
CC
=2.7 to 6.5 V:
I
OH
=-100
μ
A
V
CC
=1.8 to 2.7 V:
I
OH
=-10
μ
A
TTL I
OH
=-400
μ
A
0.45
--
V
V
High level output
voltage
V
OH
V
CC
-0.7
V
CC
-0.7
V
CC
-0.3
2.4
1.5
1.5
1.5
V
V
Write enable latch
data hold voltage
Schmitt width
V
DH
V
WD
CS, SK
V
CC
×
0.1
V
CC
×
0.1
0.05
V
Table 6
(Ta=-40
°
C to 85
°
C)
Table 7
(Ta=-40
°
C to 85
°
C)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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