參數(shù)資料
型號(hào): S-29355A
廠商: Seiko Instruments Inc.
英文描述: CMOS 4Kbit Serial EEPROM(4K位 CMOS 串行EEPROM)
中文描述: 4Kbit的CMOS串行EEPROM(4K的位的CMOS串行EEPROM的)
文件頁(yè)數(shù): 16/40頁(yè)
文件大?。?/td> 166K
代理商: S-29355A
15
N
+
N
+
Drain electrode
Select gate electrode
Control gate electrode
Source electrode
CG
FG
Thin oxide film
UTO
GND
SG
N
+
P substrate
[Data rewrite]
Data rewrite refers to the injection or removal of electrons into or from the FG. In this process, electrons
pass through a thin oxide film (UTO). The oxide film inherently acts as an insulator, but in this case the
film conducts electricity (electrons are transferred).
[Data retention]
Data retention refers to the prevention of leakage of electrons stored in the FG. This must be assured
for at least 10 years.
To meet the above stated contradictory properties, high-quality thin oxide films (UTO) must be
manufactured. Such UTOs are very thin (on the order of 10 nm), and stably manufacturing them
requires a very difficult technique.
<Remarks>
FAQ No.: 12022
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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