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參數(shù)資料
| 型號： | RSLIC18 |
| 廠商： | Intersil Corporation |
| 英文描述： | () |
| 中文描述： | （） |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 115K |
| 代理商： | RSLIC18 |
4-6
EXPECTED RESULTS
Though slightly cumbersome, the voltage divider relationship
also applies to the complex matching gain.
2
–
Z
L
Substituting the above terms into Equation 19, the G
42
gain
equation for complex matching is formed.
Cancelling the protection resistor terms in the denominator
reduces the gain equation into the following simplified form.
Therefore for either resistive or complex matching the G
42
voltage gain will always be unity and the phase will be nearly
180 degrees.
G
24
Simulation
The G
24
frequency response of the device can be simulated
using the circuit of Figure 14.
EXPECTED RESULTS
The G
24
results for complex matching are predicted using
the voltage divider relationship shown below.
Z
L
Substituting the above terms into Equation 22, the G
24
gain
equation for complex matching is formed.
Cancelling the protection resistor terms in the denominator
and substituting terms reduces the gain equation to the
frequency dependent form shown below.
R
----------------------------------------------------------------------------
=
Until now, all relationships have simplified to scalar terms
and have not contained frequency dependent components.
Evaluating the gain at 1kHz, results in a voltage gain of
0.459 and a phase of 178 degrees. Simulation results will
vary slightly due to device bandwidth.
G
44
Simulation
The G
44
frequency response of the device can be simulated
using the circuit of Figure 15.
EXPECTED RESULTS
The G
44
results for complex matching are predicted using
the voltage divider relationship shown below.
Z
L
Since the G
44
gain has the same mathematical expression
as the G
24
gain, the same frequency dependent gain
equation applies to both. Evaluating the gain at 1kHz, results
in a voltage gain of 0.459 and a phase of 178 degrees.
Simulation results will vary slightly due to device bandwidth.
Simulation Results
The following pages contain results for both simulation
examples. The magnitude and phase response of each gain
path is plotted from 10Hz to 10kHz. The model will
accurately predict device frequency response up to 1MHz. In
addition to the graphs, numerical data is also provided for
reference. Performing the above simulations is suggested
when first using the model. The results obtained should
agree with those provided herein.
where:
Z
L
R
P
=
Z
O
=
=
R
1
+ R
2
// C
2
R
P
(R
1
+R
2
// C
2
) - (2R
P
)
where:
Z
L
R
P
Z
O
=
R
1
+ R
2
// C
2
R
P
(R
1
+R
2
// C
2
) - (2R
P
)
=
=
G
42
P
O
+
-------+
=
(EQ. 18)
G
42
2
–
R
1
2R
P
R
2
R
1
C
2
+
||
+
+
(
)
1
2
2
)
R
2
C
2
||
(
)
2 R
P
)
–
----------+
=
(EQ. 19)
G
42
2
–
R
2
R
C
2
+
||
+
(
)
1
2
R
1
R
2
C
2
||
)
----------+
1
–
=
=
(EQ. 20)
FIGURE 14. G
24
COMPLEX LOAD SIMULATION CIRCUIT
470nF
TIP
RING
VRX
VTX
-IN
VFB
RSLIC18 MODEL
35
35
272K
470nF
200
100n
680
250p
52K
+
-
+
-
G = 2
G
24
–
P
O
+
-------+
=
(EQ. 21)
G
24
R
R
C
1
||
+
P
(
)
2 R
P
R
2
)
C
2
–
+
(
)
–
2
1
2
||
(
)
2 R
P
)
–
+
----------+
=
(EQ. 22)
where:
Z
L
R
P
Z
O
=
R
1
+ R
2
// C
2
R
P
(R
1
+R
2
// C
2
) - (2R
P
)
=
=
G
42
ω
( )
R
1
2R
P
–
(
)
-----+
+
–
2 R
1
R
2
2
-----+
+
(EQ. 23)
FIGURE 15. G
44
COMPLEX LOAD SIMULATION CIRCUIT
470nF
TIP
RING
VRX
VTX
-IN
VFB
RSLIC18 MODEL
35
35
272K
470nF
200
100n
680
250p
52K
G
44
–
P
O
+
-------+
=
(EQ. 24)
Application Note 9824
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