參數(shù)資料
型號: RS1BHE3/61T
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
封裝: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 85K
代理商: RS1BHE3/61T
RS1A thru RS1K
Vishay General Semiconductor
Document Number: 88707
Revision: 11-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
T
J
= 125 °C
T
J
= 25 °C
P
u
lse
W
idth = 300
μ
s
1 % D
u
ty Cycle
100
10
1
0.1
0.01
0.4
0.6
0.
8
1.0
1.2
1.4
1.6
1.
8
Instantaneo
u
s For
w
ard
V
oltage (
V
)
I
u
s
w
a
u
r
T
J
= 125 °C
T
J
= 100 °C
T
J
= 25 °C
Percent of Rated Peak Re
v
erse
V
oltage (%)
0
20
40
60
8
0
100
I
u
s
v
e
u
r
μ
A
100
10
1
0.1
0.01
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
RS1A to RS1G
RS1J to RS1K
100
10
1
1
10
100
Re
v
erse
V
oltage (
V
)
J
u
n
T
= 25 °C
f = 1.0 MHz
V
sig
= 50 m
V
p-p
Mo
u
nted on 0.2 x 0.2" (5 x 5 mm)
Copper Pad Area
0.01
0.1
t - P
u
lse D
u
ration (s)
1
10
100
10
1
T
W
)
0.157 (3.99)
0.177 (4.50)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.00
8
(0.203)
0 (0)
0.194 (4.93)
0.20
8
(5.2
8
)
0.100 (2.54)
0.110 (2.79)
0.07
8
(1.9
8
)
0.090 (2.29)
0.049 (1.25)
0.065 (1.65)
Cathode Band
DO-214AC (SMA)
0.074 MAX.
(1.
88
MAX.)
0.20
8
(5.2
8
) REF
0.066 MI
N
.
(1.6
8
MI
N
.)
0.060 MI
N
.
(1.52 MI
N
.)
Mountin
g
Pad Layout
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