參數(shù)資料
型號: RS3KHE3/9AT
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 87K
代理商: RS3KHE3/9AT
RS3A thru RS3K
Vishay General Semiconductor
Document Number: 88709
Revision: 11-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount Fast Switching Rectifier
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Fast switching for high efficiency
High forward surge capability
Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive and telecommunication.
MECHANICAL DATA
Case:
DO-214AB (SMC)
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
3.0 A
50 V to 800 V
100 A
150 ns, 250 ns, 500 ns
1.3 V
150 °C
DO-214AB (SMC)
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
RS3A
RS3B
RS3D
RS3G
RS3J
RS3K
UNIT
Device marking code
RA
RB
RD
RG
RJ
RK
Maximum repetitive peak reverse voltage
V
RRM
V
RMS
V
DC
I
F(AV)
50
100
200
400
600
800
V
Maximum RMS voltage
35
70
140
280
420
500
V
Maximum DC blocking voltage
50
100
200
400
600
800
V
Maximum average forward rectified current at T
L
= 75 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
3.0
A
I
FSM
100
A
Operating junction and storage temperature range
T
J
, T
STG
- 55 to + 150
°C
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