參數(shù)資料
型號: RS3KHE3/9AT
廠商: VISHAY SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AB
封裝: ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 87K
代理商: RS3KHE3/9AT
RS3A thru RS3K
Vishay General Semiconductor
Document Number: 88709
Revision: 11-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
Instantaneo
u
s For
w
ard
V
oltage (
V
)
I
u
s
w
a
u
r
1.
8
2.0
0.4
0.6
0.
8
1.0
1.2
1.4
1
10
100
0.1
P
u
lse
W
idth = 300
μ
s
1 % D
u
ty Cycle
T
J
= 25 °C
1.6
T
J
= 125 °C
T
J
= - 40 °C
T
J
= 125 °C
T
J
= 25 °C
Percent of Rated Peak Re
v
erse
V
oltage (%)
0
20
40
60
8
0
100
I
u
s
v
e
u
r
μ
A
100
10
1
0.1
0.01
T
J
= 75 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
RS3A to RS3G
RS3J to RS3K
100
10
1
1
10
100
Re
v
erse
V
oltage (
V
)
J
u
n
0.01
0.1
1
10
100
0.1
1
10
100
Mo
u
nted on 0.20 x 0.27" (5 x 7 mm)
Copper Pad Areas
T
W
)
t - P
u
lse D
u
ration (s)
Cathode Band
DO-214AB (SMC)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.2
8
0 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.00
8
(0.2)
0 (0)
0.320 (
8
.13)
0.305 (7.75)
0.060 (1.52)
0.030 (0.76)
0.103 (2.62)
0.079 (2.06)
Mountin
g
Pad Layout
0.126 (3.20) MI
N
.
0.060 (1.52) MI
N
.
0.1
8
5 (4.69) MAX.
0.320 REF.
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