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參數(shù)資料
| 型號(hào)： | RN5003 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 143K |
| 代理商： | RN5003 |
RN5003
2001-10-29
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-offcurrent
I
CBO
―
V
CB
= 30V, I
E
= 0
―
―
0.1
μA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
0.385
0.50
0.714
mA
Collector-emitter breakdown voltage
V
(BR)CES
―
I
C
= 10mA
30
―
―
V
h
FE (1)
V
CE
= 2V, I
C
= 0.5A
100
―
400
DC current gain
h
FE (2)
―
V
CE
= 2V, IC = 2.0A
30
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 1A, I
B
= 0.05A
―
―
0.5
V
Base-emitter saturation voltage
V
BE (sat)
―
I
C
= 1A, I
B
= 0.05A
―
―
1.2
V
Transition frequency
f
T
―
V
CE
= 2V, I
C
= 0.5A
―
120
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1 MHz
―
40
―
pF
Resistor
R
―
―
7
10
13
k
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