參數(shù)資料
型號: RN5003
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進程)
文件頁數(shù): 1/4頁
文件大?。?/td> 143K
代理商: RN5003
RN5003
2001-10-29
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN5003
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Small flat package
P
C
= 1~2W (mounted on ceramic substrate)
Complementary to RN6003
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Marking
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
30
V
Collector-emitter voltage
V
CEO
30
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
2
A
Base current
I
B
0.4
A
Collector power dissipation
P
C
500
mW
Collector power dissipation
P
C
*
1000
mW
Junction temperature
T
j
150
°C
Storage temperature range
*
: Mounterd on ceramic substrate (250mm
2
× 0.8t)
T
stg
55~150
°C
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
SC-62
2-5K1A
Unit: mm
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