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參數(shù)資料
| 型號(hào)： | RN6006 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 99K |
| 代理商： | RN6006 |
RN6006
2001-10-29
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN6006
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Small flat package
P
C
= 1~2W (mounted on ceramic substrate)
Complementary to RN5006
Equivalent Circuit
Maximum Ratings
(Ta = 25 C)
Marking
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
10
V
Collector-emitter voltage
V
CEO
10
V
Emitter-base voltage
V
EBO
6
V
DC
I
C
2
Collector current
Pulse (Note1)
I
CP
4
A
Base current
I
B
0.4
A
Collector power dissipation
P
C
500
mW
Collector power dissipation
P
C
*
1000
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
30
55~150
C
Note
: Pulse width
*
: Mounterd on ceramic substrate (250mm
2
0.8t)
10ms, duty cycle
Unit: mm
JEDEC
JEITA
TOSHIBA
Weight: 0.05g (typ.)
―
SC-62
2-5K1A
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