參數(shù)資料
型號: RN6006
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 2/3頁
文件大?。?/td> 99K
代理商: RN6006
RN6006
2001-10-29
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-offcurrent
I
CBO
V
CB
=
10V, I
E
= 0
0.1
μA
Emitter cut-off current
I
EBO
V
EB
=
6V, I
C
= 0
0.462
0.60
0.857
mA
Collector-emitter breakdown voltage
V
(BR)CES
I
C
=
1mA
10
V
h
FE (1)
V
CE
=
1V, I
C
=
0.5A
160
600
DC current gain
h
FE (2)
V
CE
=
1V, IC =
4.0A
60
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
2A, I
B
=
0.05A
0.5
V
Transition frequency
f
T
V
CE
=
1V, I
C
=
0.5A
140
MHz
Collector output capacitance
C
ob
V
CB
=
10V, I
E
= 0, f = 1 MHz
55
pF
Resistor
R
7
10
13
k
相關(guān)PDF資料
PDF描述
RNA50C27AUS CMOS System-Reset IC
RP15W101AB POWER WIREWOUND RESISTORS
RP15W101JT POWER WIREWOUND RESISTORS
RP2W101AB POWER WIREWOUND RESISTORS
RP2W101AT POWER WIREWOUND RESISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN6094992F 制造商:Yageo / Phycomp 功能描述:
RN60C 1 PCT 130 K 制造商:RN60C1303F 功能描述:
RN60C1000B 制造商:TT Electronics / IRC 功能描述:RN60C1000B
RN60C1000BB14 功能描述:金屬膜電阻器 - 透孔 1/8watt 100ohms .1% 50ppm RoHS:否 制造商:IRC 電阻:63.4 kOhms 容差:1 % 功率額定值:100 mW 電壓額定值:200 V 溫度系數(shù):100 PPM / C 端接類型:Axial 工作溫度范圍: 尺寸:2.3 mm Dia. x 6.4 mm L 封裝:Bulk
RN60C1000BBSL 制造商:Vishay Dale 功能描述:RES 100 OHM 1/4W .1% AXIAL