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參數(shù)資料
| 型號： | RN4909 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 硅外延式進(jìn)步黨（厘進(jìn)程）npn型硅外延型（厘進(jìn)程） |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 155K |
| 代理商： | RN4909 |
RN4909
2001-06-07
3
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
100
Collector cut-off current
I
CEO
―
V
CE
=
50V, I
B
= 0
―
―
500
nA
Emitter cut-off current
I
EBO
―
V
EB
=
15V, I
C
= 0
0.167
―
0.311
mA
DC current gain
h
FE
―
V
CE
=
5V, I
C
=
10mA
70
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
=
5mA, I
B
=
0.25mA
―
0.1
0.3
V
Input voltage (ON)
V
I (ON)
―
V
CE
=
0.2V, I
C
=
5mA
2.2
―
5.8
V
Input voltage (OFF)
V
I (OFF)
―
V
CE
=
5V, I
C
=
0.1mA
1.5
―
2.6
V
Transition frequency
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector output capacitance
C
ob
―
V
CB
=
10V, I
E
= 0
―
3
6
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
Collector cut-off current
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
Emitter cut-off current
I
EBO
―
V
EB
= 15V, I
C
= 0
0.167
―
0.311
mA
DC current gain
h
FE
―
V
CE
= 5V, I
C
= 10mA
70
―
―
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Input voltage (ON)
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
2.2
―
5.8
V
Input voltage (OFF)
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
1.5
―
2.6
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1 MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
―
―
32.9
47
61.1
k
Resistor ratio
R1/R2
―
―
1.92
2.14
2.35
―
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