參數(shù)資料
型號(hào)： RN4911
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
中文描述： 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程）npn型硅外延型（厘進(jìn)程）
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 177K
代理商： RN4911
RN4911
2001-06-07
1
TOSHIBA Transistor
RN4911
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Includeing two devices in US6 (ultra super mini type with 6 leads)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 10k
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Q2 Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Unit: mm
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