參數(shù)資料
型號： RN4911
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
中文描述： 東芝晶體硅外延式進(jìn)步黨（厘進(jìn)程）npn型硅外延型（厘進(jìn)程）
文件頁數(shù)： 3/6頁
文件大小： 177K
代理商： RN4911
RN4911
2001-06-07
3
Q1 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
=
50V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
―
V
EB
=
5V, I
C
= 0
―
―
100
mA
DC current gain
h
FE
―
V
CE
=
5V, I
C
=
1mA
120
―
400
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
=
5mA, I
B
=
0.25mA
―
0.1
0.3
V
Transition frequency
f
T
―
V
CE
=
10V, I
C
=
5mA
―
200
―
MHz
Collector output capacitance
C
ob
―
V
CB
=
10V, I
E
= 0, f = 1MHz
―
3
6
pF
Q2 Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
―
―
100
mA
DC current gain
h
FE
―
V
CE
= 5V, I
C
= 1mA
120
―
700
―
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1 MHz
―
3
6
pF
Q1, Q2 Common Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Input resistor
R1
―
―
7
10
13
k
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