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參數(shù)資料
| 型號(hào)： | RN4909 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 硅外延式進(jìn)步黨（厘進(jìn)程）npn型硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | RN4909 |
RN4909
2001-06-07
2
Q1, Q2 Common Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P
C
*
200
mW
Junction temperature
T
j
150
C
Storage temperature range
T
stg
55~150
C
*
Total rating
Marking
Equivalent Circuit
(Top View)
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| RN4909FE | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
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