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參數(shù)資料
| 型號： | RN2113FT |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) |
| 中文描述： | 東芝晶體硅外延式進步黨（厘進程）（偏置電阻內置晶體管） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大?。?/td> | 84K |
| 代理商： | RN2113FT |
RN2112FT,RN2113FT
2002-01-24
3
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
相關PDF資料 |
PDF描述 |
|---|---|
| RN2112 | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2113 | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications |
| RN2501 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN2502 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN2503 | Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| RN2113MFV | 功能描述:開關晶體管 - 偏壓電阻器 -100mA -50volts 47Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| RN2113MFV(TL3,T) | 制造商:Toshiba America Electronic Components 功能描述:X34 PB-F VESM TRANSISTOR PD 150MW F 1MHZ (LF) - Tape and Reel |
| RN2113MFV(TPL3) | 功能描述:開關晶體管 - 偏壓電阻器 100mA -50volts 3Pin 47Kohms RoHS:否 制造商:ON Semiconductor 配置: 晶體管極性:NPN/PNP 典型輸入電阻器: 典型電阻器比率: 安裝風格:SMD/SMT 封裝 / 箱體: 直流集電極/Base Gain hfe Min:200 mA 最大工作頻率: 集電極—發(fā)射極最大電壓 VCEO:50 V 集電極連續(xù)電流:150 mA 峰值直流集電極電流: 功率耗散:200 mW 最大工作溫度: 封裝:Reel |
| RN2114 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications |
| RN2114(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:TRAN PNP SSM -50V -100A |
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