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參數(shù)資料
| 型號(hào)： | RN1908 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 178K |
| 代理商： | RN1908 |
RN1907~RN1909
2001-06-07
2
Electrical Characteristics (Ta = 25 C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Collector cut-off current
RN1907~1909
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
RN1907
―
V
EB
= 6V, I
C
= 0
0.081
―
0.15
RN1908
―
V
EB
= 7V, I
C
= 0
0.078
―
0.145
Emitter cut-off current
RN1909
I
EBO
―
V
EB
= 15V, I
C
= 0
0.167
―
0.311
mA
RN1907
―
80
―
―
RN1908
―
80
―
―
DC current gain
RN1909
h
FE
―
V
CE
= 5V, I
C
= 10mA
70
―
―
―
Collector-emitter
saturation voltage
RN1907~1909
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
RN1907
―
0.7
―
1.8
RN1908
―
1.0
―
2.6
Input voltage (ON)
RN1909
V
I (ON)
―
V
CE
= 0.2V, I
C
= 5mA
2.2
―
5.8
V
RN1907
―
0.5
―
1.0
RN1908
―
0.6
―
1.16
Input voltage (OFF)
RN1909
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
1.5
―
2.6
V
Translation frequency
RN1907~1909
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MHz
Collector output capacitance RN1907~1909
C
ob
―
V
CB
= 10V, I
E
= 0,
f = 1MHz
―
3
6
pF
RN1907
―
7
10
13
RN1908
―
15.4
22
28.6
Input resistor
RN1909
R1
―
―
32.9
47
61.1
k
RN1907
―
0.191
0.213
0.232
RN1908
―
0.421
0.468
0.515
Resistor ratio
RN1909
R1/R2
―
―
1.92
2.14
2.35
―
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