參數(shù)資料
型號(hào): RN1417
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 2/8頁
文件大?。?/td> 272K
代理商: RN1417
RN1414 RN1418
2001-06-07
2
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN1414~1418
I
CBO
V
CB
= 50V, I
E
= 0
100
nA
Collector cut-off
current
RN1414~1418
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1414
V
EB
= 5V, I
C
= 0
0.35
0.65
RN1415
V
EB
= 6V, I
C
= 0
0.37
0.71
RN1416
V
EB
= 7V, I
C
= 0
0.36
0.68
RN1417
V
EB
= 15V, I
C
= 0
0.78
1.46
Emitter cut-off current
RN1418
I
EBO
V
EB
= 25V, I
C
= 0
0.33
0.63
mA
RN1414~16,
18
50
DC current gain
RN1417
h
FE
V
CE
= 5V, I
C
= 10mA
30
Collector-emitter
saturation voltage
RN1414~1418
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1
0.3
V
RN1414
0.6
2.0
RN1415
0.7
2.5
RN1416
0.8
2.5
RN1417
1.5
3.5
Input voltage (ON)
RN1418
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
2.5
10.0
V
RN1414
0.3
0.9
RN1415
0.3
1.0
RN1416
0.3
1.1
RN1417
0.3
2.3
Input voltage (OFF)
RN1418
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
0.5
5.7
V
Transition frequency
RN1414~1418
f
T
V
CE
= 10V, I
C
= 5mA
250
MHz
Collector Output
capacitance
RN1414~1418
C
ob
V
= 10V, I
E
= 0,
f = 1MHz
3.0
6.0
pF
RN1414
0.7
1.0
1.3
RN1415
1.54
2.2
2.86
RN1416
3.29
4.7
6.11
RN1417
7.0
10.0
13.0
Input resistor
RN1418
R1
32.9
47.0
61.1
k
RN1414
0.1
RN1415
0.22
RN1416
0.47
RN1417
2.13
Resistor ratio
RN1418
R1/R2
4.7
相關(guān)PDF資料
PDF描述
RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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RN1423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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