參數(shù)資料
型號(hào): RN1418
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 1/8頁
文件大?。?/td> 272K
代理商: RN1418
RN1414 RN1418
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1414,RN1415,RN1416
RN1417,RN1418
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2414~RN2418
Equivalent Circuit and Bias Resister Values
Type No.
R1 (k
)
R2 (k
)
RN1414
1
10
RN1415
2.2
10
RN1416
4.7
10
RN1417
10
4.7
RN1418
47
10
Maximum Ratings
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1414~1418
V
CEO
50
V
RN1414
5
RN1415
6
RN1416
7
RN1417
15
Emitter-base voltage
RN1418
V
EBO
25
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1414~1418
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
SC-236MOD
SC-59
2-3F1A
Unit: mm
相關(guān)PDF資料
PDF描述
RN1421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1422 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1423 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1424 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1425 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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