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參數(shù)資料
| 型號(hào)： | RN1417 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 272K |
| 代理商： | RN1417 |
RN1414 RN1418
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1414,RN1415,RN1416
RN1417,RN1418
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2414~RN2418
Equivalent Circuit and Bias Resister Values
Type No.
R1 (k
)
R2 (k
)
RN1414
1
10
RN1415
2.2
10
RN1416
4.7
10
RN1417
10
4.7
RN1418
47
10
(Ta = 25 C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1414~1418
V
CEO
50
V
RN1414
5
RN1415
6
RN1416
7
RN1417
15
Emitter-base voltage
RN1418
V
EBO
25
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
200
mW
Junction temperature
T
j
150
C
Storage temperature range
RN1414~1418
T
stg
55~150
C
JEDEC
EIAJ
TOSHIBA
Weight: 0.012g
SC-236MOD
SC-59
2-3F1A
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN1418 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1421 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1422 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1423 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1424 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN1417(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Tr.+ViasRes,NPN,Vceo=50V,Ic=100mA,S-MINI |
| RN1418 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1419P | 制造商: 功能描述: 制造商:undefined 功能描述: |
| RN141G | 制造商:ROHM 制造商全稱:Rohm 功能描述:PIN diode |
| RN141G_0511 | 制造商:ROHM 制造商全稱:Rohm 功能描述:PIN diode |
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