參數(shù)資料
型號: RN1414
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 2/8頁
文件大?。?/td> 272K
代理商: RN1414
RN1414 RN1418
2001-06-07
2
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN1414~1418
I
CBO
V
CB
= 50V, I
E
= 0
100
nA
Collector cut-off
current
RN1414~1418
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1414
V
EB
= 5V, I
C
= 0
0.35
0.65
RN1415
V
EB
= 6V, I
C
= 0
0.37
0.71
RN1416
V
EB
= 7V, I
C
= 0
0.36
0.68
RN1417
V
EB
= 15V, I
C
= 0
0.78
1.46
Emitter cut-off current
RN1418
I
EBO
V
EB
= 25V, I
C
= 0
0.33
0.63
mA
RN1414~16,
18
50
DC current gain
RN1417
h
FE
V
CE
= 5V, I
C
= 10mA
30
Collector-emitter
saturation voltage
RN1414~1418
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1
0.3
V
RN1414
0.6
2.0
RN1415
0.7
2.5
RN1416
0.8
2.5
RN1417
1.5
3.5
Input voltage (ON)
RN1418
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
2.5
10.0
V
RN1414
0.3
0.9
RN1415
0.3
1.0
RN1416
0.3
1.1
RN1417
0.3
2.3
Input voltage (OFF)
RN1418
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
0.5
5.7
V
Transition frequency
RN1414~1418
f
T
V
CE
= 10V, I
C
= 5mA
250
MHz
Collector Output
capacitance
RN1414~1418
C
ob
V
= 10V, I
E
= 0,
f = 1MHz
3.0
6.0
pF
RN1414
0.7
1.0
1.3
RN1415
1.54
2.2
2.86
RN1416
3.29
4.7
6.11
RN1417
7.0
10.0
13.0
Input resistor
RN1418
R1
32.9
47.0
61.1
k
RN1414
0.1
RN1415
0.22
RN1416
0.47
RN1417
2.13
Resistor ratio
RN1418
R1/R2
4.7
相關(guān)PDF資料
PDF描述
RN1415 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1416 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1417 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1418 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1421 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
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