- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381067 > RN1241 (Toshiba Corporation) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) PDF資料下載
參數(shù)資料
| 型號(hào)： | RN1241 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 86K |
| 代理商： | RN1241 |
RN1241~RN1244
2001-06-07
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
0.1
μA
Emitter cut-off current
I
EBO
―
V
EB
= 25V, I
C
= 0
―
―
0.1
μA
DC current gain
h
FE (Note)
―
V
CE
= 2V, I
C
= 4mA
200
―
1200
―
Collector-emitter saturation voltage
V
CE (sat)
f
T
C
ob
―
I
C
= 30mA, I
B
= 3mA
―
―
0.1
V
Translation frequency
―
V
CE
= 6V, I
C
= 4mA
―
30
―
MHz
Collector output capacitance
―
V
CB
= 10V, I
E
= 0, f = 1MHz
―
4.8
―
pF
RN1241
―
3.9
5.6
7.3
RN1242
―
7
10
13
RN1243
―
15.4
22
28.6
Input resistor
RN1244
R1
―
―
1.54
2.2
2.86
k
Note: h
EE
Classification A: 200~700 B: 350~1200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN1242 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1243 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1244 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1307 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1308 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN12416 | 制造商:n/a 功能描述:750-101-R4.7K |
| RN1241A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK |
| RN1241-A(F) | 制造商:Toshiba 功能描述:NPN 20V 300mA Bulk |
| RN1241B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK |
| RN1242 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。