參數(shù)資料
型號: RN1243
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 1/3頁
文件大小: 86K
代理商: RN1243
RN1241~RN1244
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
High emitter-base voltage
: V
EBO
= 25v (min)
High reverse hfe
: reverse h
FE
= 150 (typ.) (V
CE
=
2V, I
C
=
4ma)
Low on resistance
: R
ON
= 1
(typ.) (I
B
= 5mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
20
V
Emitter-base voltage
V
EBO
25
V
Collector current
I
c
300
mA
Collector power dissipation
P
c
300
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
2-4E1A
Unit: mm
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RN1243A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK
RN1243B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK
RN1244 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1244A 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK
RN1244B 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK