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參數(shù)資料
| 型號(hào)： | RN1241 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大小： | 86K |
| 代理商： | RN1241 |
RN1241~RN1244
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241,RN1242,RN1243,RN1244
For Muting and Switching Applications
High emitter-base voltage
: V
EBO
= 25v (min)
High reverse hfe
: reverse h
FE
= 150 (typ.) (V
CE
=
2V, I
C
=
4ma)
Low on resistance
: R
ON
= 1
(typ.) (I
B
= 5mA)
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
20
V
Emitter-base voltage
V
EBO
25
V
Collector current
I
c
300
mA
Collector power dissipation
P
c
300
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
―
―
2-4E1A
Unit: mm
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN1242 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1243 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1244 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1307 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1308 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN12416 | 制造商:n/a 功能描述:750-101-R4.7K |
| RN1241A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK |
| RN1241-A(F) | 制造商:Toshiba 功能描述:NPN 20V 300mA Bulk |
| RN1241B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | 20V V(BR)CEO | 300MA I(C) | SPAK |
| RN1242 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
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