- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄381067 > RN1225 (Toshiba Corporation) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) PDF資料下載
參數(shù)資料
| 型號(hào)： | RN1225 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| 中文描述： | 東芝npn型晶體管硅外延型（厘進(jìn)程） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 310K |
| 代理商： | RN1225 |
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
2001-06-07
2
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
Collector cut-off current
RN1221~1227
I
CEO
―
V
CE
= 50V, I
B
= 0
―
―
500
nA
RN1221
―
3.85
―
7.14
RN1222
―
1.75
―
3.25
RN1223
―
0.82
―
1.52
RN1224
―
V
EB
= 10V, I
C
= 0
0.38
―
0.71
RN1225
―
0.365
―
0.682
RN1226
―
V
EB
= 5V, I
C
= 0
0.35
―
0.65
Emitter cut-off current
RN1227
I
EBO
―
V
EB
= 6V, I
C
= 0
0.378
―
0.703
mA
RN1221
―
60
―
―
RN1222
―
65
―
―
RN1223
―
70
―
―
RN1224
―
90
―
―
RN1225
―
90
―
―
RN1226
―
90
―
―
DC current gain
RN1227
h
FE
―
V
CE
= 5V, I
C
= 100mA
90
―
―
―
RN1221
I
C
= 50mA, I
B
= 2mA
Collector-emitter
saturation voltage
RN1222~1227
V
CE (sat)
―
I
C
= 50mA, I
B
= 1mA
―
―
0.25
V
RN1221
―
1.0
―
3.5
RN1222
―
1.4
―
4.5
RN1223
―
2.0
―
6.5
RN1224
―
3.0
―
12.0
RN1225
―
0.6
―
2.0
RN1226
―
0.7
―
2.5
Input voltage (ON)
RN1227
V
I (ON)
―
V
CE
= 0.2V, I
C
= 100mA
1.0
―
3.0
V
RN1221~1224
―
0.8
―
1.3
RM1225, 1226
―
0.4
―
0.8
Input voltage (OFF)
RN1227
V
I (OFF)
―
V
CE
= 5V, I
C
= 0.1mA
0.5
―
1.0
V
Translation frequency
RN1221~1227
f
T
―
V
CE
= 5V, I
C
= 20mA
―
300
―
MHz
Collector output
capacitance
RN1221~1227
C
ob
―
V
CB
= 10V, I
E
= 0,
f = 1MHz
―
7
―
pF
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RN1226 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1227 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1241 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1242 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1243 | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RN1225(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Digital BJT NPN 50V 800mA 3-Pin Mini |
| RN1226 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1227 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) |
| RN1227(F) | 制造商:Toshiba 功能描述:NPN 50V 800mA 2.2 / 10 MINI Bulk |
| RN-123.3S | 功能描述:DC/DC轉(zhuǎn)換器 1.25W DC/DC 1kV UNREG 12Vin 3.3Vout RoHS:否 制造商:Murata 產(chǎn)品: 輸出功率: 輸入電壓范圍:3.6 V to 5.5 V 輸入電壓（標(biāo)稱）: 輸出端數(shù)量:1 輸出電壓（通道 1）:3.3 V 輸出電流（通道 1）:600 mA 輸出電壓（通道 2）: 輸出電流（通道 2）: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體尺寸: |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。