參數(shù)資料
型號: RN1223
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進程)
文件頁數(shù): 8/8頁
文件大?。?/td> 310K
代理商: RN1223
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
2001-06-07
8
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
The information contained herein is subject to change without notice.
000707EAA
RESTRICTIONS ON PRODUCT USE
相關(guān)PDF資料
PDF描述
RN1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1225 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1226 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN1223(F) 制造商:Toshiba 功能描述:NPN 50V 800mA 4.7 / 4.7 MINI Bulk
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RN122-3/02 制造商:Schaffner 功能描述:CHOKE COM/ASYM MODE 2X4.5MH 3A
RN122-3-02 功能描述:共模濾波器/扼流器 RN122-3/02 RoHS:否 制造商:TDK 電感: 阻抗:35 Ohms 容差: 最大直流電流:0.1 A 最大直流電阻:1.5 Ohms 自諧振頻率: Q 最小值: 工作溫度范圍:- 25 C to + 85 C 端接類型:SMD/SMT 封裝 / 箱體:0302 (0806 metric) 系列:TCE
RN122-3-02-4M5 功能描述:4.5mH @ 10kHz 2 Line Common Mode Choke Through Hole 3A DCR 80 mOhm (Typ) 制造商:schaffner emc inc. 系列:RN 包裝:托盤 零件狀態(tài):在售 濾波器類型:電源線 線路數(shù):2 不同頻率時的阻抗:- 電感 @ 頻率:4.5mH @ 10kHz 額定電流(最大):3A 直流電阻(DCR)(最大):80 毫歐(標準) 額定電壓 - DC:- 額定電壓 - AC:300V 工作溫度:-40°C ~ 100°C 等級:- 認可:ENEC, UR, VDE 特性:- 安裝類型:通孔 大小/尺寸:0.886" 長 x 0.846" 寬(22.50mm x 21.50mm) 高度(最大值):0.531"(13.50mm) 封裝/外殼:水平式,4 PC 引腳 標準包裝:20