參數(shù)資料
型號(hào): RN1223
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁(yè)數(shù): 1/8頁(yè)
文件大?。?/td> 310K
代理商: RN1223
RN1221,RN1222,RN1223,RN1224,RN1225,RN1226,RN1227
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1221,RN1222,RN1223,RN1224
RN1225,RN1226,RN1227
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
High current type (I
C(MAX)
= 800mA)
With built-in bias resistors.
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Low
VCE (sat)
Complementary to RN2221~2227
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1221~1227
V
CEO
50
V
RN1221~1224
10
RN1225, 1226
5
Emitter-base voltage
RN1227
V
EBO
6
V
Collector current
I
c
800
mA
Collector power dissipation
P
c
300
mW
Junction temperature
T
j
150
°C
Storage temperature range
RN1221~1227
T
stg
55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 0.13g
2-4E1A
Unit: mm
Type No.
R1 (k
)
R2 (k
)
RN1221
1
1
RN1222
2.2
2.2
RN1223
4.7
4.7
RN1224
10
10
RN1225
0.47
10
RN1226
1
10
RN1227
2.2
10
相關(guān)PDF資料
PDF描述
RN1224 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1225 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1226 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1227 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1241 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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