參數(shù)資料
型號: RN1116
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
中文描述: 開關(guān),逆變電路,接口電路及驅(qū)動電路應(yīng)用
文件頁數(shù): 2/8頁
文件大?。?/td> 261K
代理商: RN1116
RN1114~RN1118
2001-06-07
2
Electrical Characteristics
(Ta = 25 C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
RN1114~1118
I
CBO
V
CB
= 50V, I
E
= 0
100
nA
Collector cut-off current
RN1114~1118
I
CEO
V
CE
= 50V, I
B
= 0
500
nA
RN1114
V
EB
= 5V, I
C
= 0
0.35
0.65
RN1115
V
EB
= 6V, I
C
= 0
0.37
0.71
RN1116
V
EB
= 7V, I
C
= 0
0.36
0.68
RN1117
V
EB
= 15V, I
C
= 0
0.78
1.46
Emitter cut-off current
RN1118
I
EBO
V
EB
= 25V, I
C
= 0
0.33
0.63
mA
RN1114~16, 18
50
DC current gain
RN1117
h
FE
V
CE
= 5V, I
C
= 10mA
30
Collector-emitter
saturation voltage
RN1114~1118
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1
0.3
V
RN1114
0.6
2.0
RN1115
0.7
2.5
RN1116
0.8
2.5
RN1117
1.5
3.5
Input voltage (ON)
RN1118
V
I (ON)
V
CE
= 0.2V, I
C
= 5mA
2.5
10.0
V
RN1114
0.3
0.9
RN1115
0.3
1.0
RN1116
0.3
1.1
RN1117
0.3
2.3
Input voltage (OFF)
RN1118
V
I (OFF)
V
CE
= 5V, I
C
= 0.1mA
0.5
5.7
V
Translation Frequency
RN1114~1118
f
T
V
CE
= 10V, I
C
= 5mA
250
MHz
Collector output
capacitance
RN1114~1118
C
ob
V
CB
= 10V, I
E
= 0,
f = 1MHz
3.0
6.0
pF
RN1114
0.7
1.0
1.3
RN1115
1.54
2.2
2.86
RN1116
3.29
4.7
6.11
RN1117
7.0
10.0
13.0
Input Resistor
RN1118
R
1
32.9
47.0
61.1
k
RN1114
0.1
RN1115
0.22
RN1116
0.47
RN1117
2.13
Resistor Ratio
RN1118
R
1
/R
2
4.7
相關(guān)PDF資料
PDF描述
RN1117 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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