參數(shù)資料
型號(hào)： RN1010
廠商： Toshiba Corporation
英文描述： TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述： 東芝npn型晶體管硅外延型（厘進(jìn)程）
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 155K
代理商： RN1010
RN1010, RN1011
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1010,RN1011
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2010
~
RN2011
Equivalent Circuit
Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
400
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~125
°C
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
―
V
CB
= 50V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
―
V
EB
= 5V, I
C
= 0
―
―
100
nA
DC current gain
h
FE
―
V
CE
= 5V, I
C
= 1mA
120
―
700
Collector-emitter saturation voltage
V
CE (sat)
―
I
C
= 5mA, I
B
= 0.25mA
―
0.1
0.3
V
Transition frequency
f
T
―
V
CE
= 10V, I
C
= 5mA
―
250
―
MH
z
Collector output capacitance
C
ob
―
V
CB
= 10V, I
E
= 0, f = 1MH
z
―
3
6
pF
RN1010
3.29
4.7
6.11
Input resistor
RN1011
R1
―
7
10
13
k
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
TO-92
SC-43
2-5F1B
Unit: mm
相關(guān)PDF資料
PDF描述
RN1011 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1103 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1104 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1105 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RN1010(F) 制造商:Toshiba 功能描述:NPN 50V 100mA 4.7 / TO92 Bulk
RN1011 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1011(F) 制造商:Toshiba America Electronic Components 功能描述:Trans Digital BJT NPN 50V 100mA 3-Pin TO-92
RN1019 制造商:Maglite 功能描述:Mag Charger 制造商:MAG 功能描述:Mag Charger Flashlight, Features: Rechargeable battery up to 1000 times, a state of art electro-formed reflector, high intensity halogen lamp and 360 degree charging ring, 12 V and 120 V convertor
RN101K1HBK-1020P 功能描述:鋁質(zhì)電解電容器 - 帶引線 50V 100uF 10% 10x20mm RoHS:否 制造商:Kemet 引線類型: 電容:220 uF 容差:20 % 電壓額定值:25 V 工作溫度范圍: 端接類型:Radial 外殼直徑:8 mm 外殼長(zhǎng)度:11 mm 引線間隔:5 mm 產(chǎn)品:General Purpose Electrolytic Capacitors 封裝:Bulk
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*