參數(shù)資料
型號(hào): RN1011
廠商: Toshiba Corporation
英文描述: TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
中文描述: 東芝npn型晶體管硅外延型(厘進(jìn)程)
文件頁數(shù): 1/4頁
文件大?。?/td> 155K
代理商: RN1011
RN1010, RN1011
2001-06-07
1
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1010,RN1011
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2010
~
RN2011
Equivalent Circuit
Maximum Ratings
(Ta
=
25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
V
CEO
50
V
Emitter-base voltage
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
*
400
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55~125
°C
Electrical Characteristics
(Ta = 25°C)
Characteristic
Symbol
Test
Circuit
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
= 50V, I
E
= 0
100
nA
Emitter cut-off current
I
EBO
V
EB
= 5V, I
C
= 0
100
nA
DC current gain
h
FE
V
CE
= 5V, I
C
= 1mA
120
700
Collector-emitter saturation voltage
V
CE (sat)
I
C
= 5mA, I
B
= 0.25mA
0.1
0.3
V
Transition frequency
f
T
V
CE
= 10V, I
C
= 5mA
250
MH
z
Collector output capacitance
C
ob
V
CB
= 10V, I
E
= 0, f = 1MH
z
3
6
pF
RN1010
3.29
4.7
6.11
Input resistor
RN1011
R1
7
10
13
k
JEDEC
EIAJ
TOSHIBA
Weight: 0.21g
TO-92
SC-43
2-5F1B
Unit: mm
相關(guān)PDF資料
PDF描述
RN1101 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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