參數(shù)資料
型號: RN1101
廠商: Toshiba Corporation
英文描述: Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
中文描述: 開關,逆變電路,接口電路及驅(qū)動電路應用
文件頁數(shù): 1/7頁
文件大小: 252K
代理商: RN1101
RN1101 RN1106
2001-06-07
1
Type No.
R1 (k
)
R2 (k
)
RN1101
4.7
4.7
RN1102
10
10
RN1103
22
22
RN1104
47
47
RN1105
2.2
47
RN1106
4.7
47
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1101,RN1102,RN1103
RN1104,RN1105,RN1106
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2101
~
RN2106
Equivalent Circuit and Bias Resister Values
Maximum Ratings
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V
CBO
50
V
Collector-emitter voltage
RN1101~1106
V
CEO
50
V
RN1101~1104
10
Emitter-base voltage
RN1105, 1106
V
EBO
5
V
Collector current
I
C
100
mA
Collector power dissipation
P
C
100
mW
Junction temperature
T
j
150
°C
Storage temperature range
RN1101~1106
T
stg
55~150
°C
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
2-2H1A
Unit: mm
相關PDF資料
PDF描述
RN1103 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1104 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1105 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1106 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
RN1110F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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