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參數(shù)資料
| 型號(hào)： | RMWB33001 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | 33 GHz Buffer Amplifier MMIC |
| 中文描述： | 32000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | 3 X 1.20 MM, DIE |
| 文件頁(yè)數(shù)： | 4/6頁(yè) |
| 文件大小： | 234K |
| 代理商： | RMWB33001 |
2004 Fairchild Semiconductor Corporation
RMWB33001 Rev. C
R
Test Procedure for Biasing and Operation
CAUTION: LOSS OF GATE VOLTAGE (Vg) WHILE
DRAIN VOLTAGE (Vd) IS PRESENT MAY DAMAGE THE
AMPLIFIER CHIP.
The following sequence of steps must be followed to
properly test the amplifier:
Step 1:
Turn off RF input power.
Step 2:
Connect the DC supply grounds to the ground of
the chip carrier. Slowly apply negative gate bias
supply voltage of -1.5V to Vg.
Step 3:
Slowly apply positive drain bias supply voltage of
+4V to Vd.
Step 4:
Adjust gate bias voltage to set the quiescent
current of Idq = 112mA.
Step 5:
After the bias condition is established, the RF
input signal may now be applied at the
appropriate frequency band.
Step 6:
Follow turn-off sequence of:
(i) Turn off RF input power,
(ii) Turn down and off drain voltage (Vd),
(iii) Turn down and off gate bias voltage (Vg).
Figure 4. Recommended Assembly Diagram
Note:
Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
100pF
RF
Input
RF
Output
5mil Thick
Alumina
50
5 mil Thick
Alumina
50
2 mil Gap
L< 0.015”
(4 Places)
Die-Attach
80Au/20Sn
10,000pF
100pF
10,000pF
10,000pF
100pF
100pF
100pF
100pF
Drain Supply
Vd = 4 V
Gate Supply V
g
Output Power
Detector Voltage V
det
3k
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